POWER SEMICONDUCTOR MODULE

摘要

In the present invention, leads 16a-16h are respectively connected to electrode pads 14a-14h disposed on the upper surface of a substrate 12. Power semiconductor elements 18a, 18b are respectively mounted on the electrode pads 14a, 14b. The leads 16a-16h, integrated together with a frame, are respectively connected to the electrode pads 14a-14h. At the distal end of each of the leads 16a-16h is formed a joining surface which has a surface area exceeding the surface area of the upper surface of a target electrode pad and which is joined to the upper surface of the target electrode pad.