发明名称 |
Method for selectively depositing a layer on a three dimensional structure |
摘要 |
A method may include providing a substrate having a surface that defines a substrate plane and a substrate feature that extends from the substrate plane; directing an ion beam comprising angled ions to the substrate at a non-zero angle with respect to a perpendicular to the substrate plane, wherein a first portion of the substrate feature is exposed to the ion beam and wherein a second portion of the substrate feature is not exposed to the ion beam; directing molecules of a molecular species to the substrate wherein the molecules of the molecular species cover the substrate feature; and providing a second species to react with the molecular species, wherein selective growth of a layer comprising the molecular species and the second species takes place such that a first thickness of the layer grown on the first portion is different from a second thickness grown on the second portion. |
申请公布号 |
US9453279(B2) |
申请公布日期 |
2016.09.27 |
申请号 |
US201414336893 |
申请日期 |
2014.07.21 |
申请人 |
Varian Semiconductor Equipment Associates, Inc. |
发明人 |
Ruffell Simon;Omstead Thomas R.;Renau Anthony |
分类号 |
H01L21/22;H01L21/225;H01L21/02;C23C16/455;C23C16/48;C23C16/50;C23C16/52;H01J37/32 |
主分类号 |
H01L21/22 |
代理机构 |
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代理人 |
|
主权项 |
1. A method of selectively doping a three dimensional substrate feature on a substrate, comprising:
exposing the substrate to an oxide plasma wherein the substrate feature is covered with a sub-monolayer of oxygen; directing an ion beam comprising angled ions to the substrate at a non-zero angle with respect to a perpendicular to a substrate plane when the substrate feature is covered with the sub-monolayer of oxygen, wherein a first portion of the substrate feature is exposed to the ion beam and wherein a second portion of the substrate feature is not exposed to the ion beam, wherein the sub-monolayer of oxygen is removed in the first portion and the sub-monolayer of oxygen remains in the second portion; and after the directing the ion beam, directing molecules of a molecular species that includes a dopant to the substrate wherein the molecules of the molecular species cover the substrate feature, wherein the directing the ion beam and directing the molecules generates selective growth of a dopant oxide layer comprising the dopant on the second portion but not on the first portion. |
地址 |
Gloucester MA US |