发明名称 Method and apparatus for decoding memory
摘要 A thin-film memory may include a thin-film transistor-free address decoder in conjunction with thin-film memory elements to yield an all-thin-film memory. Such a thin-film memory excludes all single-crystal electronic devices and may be formed, for example, on a low-cost substrate, such as fiberglass, glass or ceramic. The memory may be configured for operation with an external memory controller.
申请公布号 US9472273(B2) 申请公布日期 2016.10.18
申请号 US201514791463 申请日期 2015.07.05
申请人 Carlow Innovations LLC 发明人 Parkinson Ward
分类号 G11C8/10;G11C13/00;G11C8/08 主分类号 G11C8/10
代理机构 代理人 Bray Kevin L.
主权项 1. A method for operating an electronic system comprising: providing an electronic system, the electronic system including a component selected from the group consisting of RAM, ROM, a hard drive, a removable storage medium, a display, and an input device; the component including a first thin-film memory cell and a first thin-film transistor-free address decoder, the first thin-film memory cell includes a first thin-film isolation device in series with a first thin-film memory element, the first decoder including one or more diodes; and selecting the first thin-film memory cell, the selecting permitting access to the first thin-film memory element and including applying a reverse bias to one of the one or more diodes, the applying reverse bias triggering the first thin-film isolation device to permit the access to the first thin-film memory element.
地址 Alexandria VA US