| 发明名称 |
MANUFACTURING METHODS OF SEMICONDUCTOR LIGHT-EMITTING DEVICES |
| 摘要 |
A method of making a semiconductor device comprising: providing a semiconductor wafer having a semiconductor layer (210); forming a first mask layer (220) over the semiconductor layer; forming a first metal layer (225) over the first mask layer; forming a second metal layer (230) over the first metal layer, the first metal layer having a lower melting point than the second metal layer; annealing the second metal layer to form islands (231); and etching through the first mask layer and the semiconductor layer using the islands as a mask to form an array of pillars. |
| 申请公布号 |
US2016336487(A1) |
申请公布日期 |
2016.11.17 |
| 申请号 |
US201515110968 |
申请日期 |
2015.01.08 |
| 申请人 |
SEREN PHOTONICS LIMITED |
发明人 |
Wang Tao |
| 分类号 |
H01L33/24;H01L33/44;H01L33/50;H01L33/00;H01L33/08 |
主分类号 |
H01L33/24 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of making a semiconductor device comprising:
(i) providing a semiconductor wafer having a semiconductor layer; (ii) forming a first mask layer over the semiconductor layer; (iii) forming a first metal layer over the first mask layer; (iv) forming a second metal layer over the first metal layer, the first metal layer having a lower melting point than the second metal layer; (iv) annealing the second metal layer to form islands; (v) etching through the first mask layer and the semiconductor layer using the islands as a second mask layer to form an array of pillars. |
| 地址 |
Bridgend GB |
