Device and method for improved threshold voltage distribution for non-volatile memory

摘要

The present invention provides methods and associated devices for controlling the voltage threshold distribution corresponding to performing a function on cells of non-volatile memory device. In one embodiment, a method is provided. The method may comprise providing the non-volatile memory device. The device comprises one or more strings, each string comprising a plurality of cells, the plurality of cells comprising a first cell and a second cell. The method further comprises performing a function of the non-volatile memory device by applying a first function voltage to the first cell and a second function voltage to the second cell. The first function voltage and the second function voltage are different.

主权项

1. A method for controlling a threshold voltage distribution corresponding to a non-volatile memory device, the method comprising:
providing the non-volatile memory device, the device comprising one or more strings, each string comprising a plurality of cells, the plurality of cells comprising a first cell and a second cell; performing a function of the non-volatile memory device by applying a first function voltage to the first cell and a second function voltage to the second cell, wherein the first function voltage and the second function voltage are different, wherein the first cell comprises a channel region defined by a first width and the second cell comprises a channel region defined by a second width, the first width being different than the second width.