| 发明名称 | Lithography scanner throughput | ||
| 摘要 | A method for use in the manufacture of a microelectronic apparatus, the method comprising exposing a dummy field on a substrate by utilizing a lithographic scanner at a first speed, and exposing a production field on the substrate by utilizing the lithographic scanner at a second speed, where the first speed is substantially greater than the second speed. In a related embodiment, a method for use in the manufacture a microelectronic apparatus comprises exposing a non-critical layer of the apparatus by utilizing a lithographic scanner at a first speed, and exposing a critical layer of the apparatus by utilizing the lithographic scanner at a second speed, where the first speed is substantially greater than the second speed. | ||
| 申请公布号 | US9529275(B2) | 申请公布日期 | 2016.12.27 |
| 申请号 | US200711677320 | 申请日期 | 2007.02.21 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Lin Chien-Hsun;Yang An-Kao;Peng Jui-Chung;Guo Yao-Wen |
| 分类号 | G03B27/58;G03F7/20 | 主分类号 | G03B27/58 |
| 代理机构 | Haynes and Boone, LLP | 代理人 | Haynes and Boone, LLP |
| 主权项 | 1. A method of manufacturing a microelectronic apparatus, comprising: exposing a pattern in a dummy field on a substrate by utilizing a lithographic scanner at a first speed; and exposing the same pattern in a production field on the substrate by utilizing the lithographic scanner at a second speed; wherein the first speed is substantially greater than the second speed, and wherein the dummy field comprises an exposure area that overlaps an outermost edge of the substrate, and further wherein the production field comprises an exposure area that lies completely within the outermost edge of the substrate, further wherein the pattern extends to the outermost edge of the substrate. | ||
| 地址 | Hsin-Chu TW | ||