Method of forming power semiconductor devices with controllable integrated buffer

摘要

A method of manufacturing a semiconductor device and device in which a sacrificial N shelf layer is grown on a P+ semiconductor substrate to contain the out-diffusion of dopant from the substrate. An N+ buffer layer is grown on the N shelf layer and an N- epitaxial layer is grown on the N+ buffer layer. The presence of the N shelf layer, which is consumed by the substrate dopant during further device fabrication, allows the integrated dopant level of the N+ buffer layer to be accurately controlled in the finished device.