INTERCONNECTION STRUCTURE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: An interconnection structure of a semiconductor device is provided to eliminate electromigration damage, by disposing first and second conductive layers having different grain structures on and under a back-up layer. CONSTITUTION: An interconnection structure of a semiconductor device comprises a semiconductor substrate(61), an insulating layer(65), a first back-up layer(67), a first conductive layer(69), a second back-up layer(71), a second conductive layer(73) and a third back-up layer(75). The insulating layer is formed on the semiconductor substrate. The first back-up layer is formed on the insulating layer. The first conductive layer is formed on the first back-up layer. The second back-up layer is formed on the first conductive layer. The second conductive layer is formed on the second back-up layer. The third back-up layer is formed on the second conductive layer.