| 摘要 |
A method of forming a contact hole of a semiconductor device is disclosed. At the time of a hard mask formation process for forming a contact hole of a semiconductor device, first patterns are formed using a photoresist pattern employing an exposure process. Spacers having a predetermined thickness are formed on sidewalls of the first patterns using an amorphous carbon layer. Spaces between the first patterns including the spacers are gap filled to form second patterns. Accordingly, a contact hole having a pitch with exposure equipment resolution or less can be formed.
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