INTEGRATED CIRCUIT MEMORY SYSTEM EMPLOYING SILICON RICH LAYERS

摘要

An integrated circuit memory system [100] that includes: providing a substrate [102]; forming a silicon rich charge storage layer [204] over the substrate [102]; forming a first isolation trench [400] through the silicon rich charge storage layer [204] in a first direction [900]; and forming a second isolation trench [800] through the silicon rich charge storage layer [204] in a second direction [902].