发明名称 |
MULTI-USE MEMORY CELL AND MEMORY ARRAY AND METHOD FOR USE THEREWITH |
摘要 |
A multi-use memory cell and memory array and a method for use therewith are disclosed. In one preferred embodiment, a memory cell is operable as a one-time programmable memory cell or a rewritable memory cell. The memory cell comprises a memory element comprising a semiconductor material configurable to one of at least three resistivity states, wherein a first resistivity state is used to represent a data state of the memory cell when the memory cell operates as a one-time programmable memory cell but not when the memory cell operates as a rewritable memory cell. A memory array with such memory cells is also disclosed. In another preferred embodiment, a memory cell is provided comprising a switchable resistance material, wherein the memory cell is operable in a first mode in which the memory cell is programmed with a forward bias and a second mode in which the memory cell is programmed with a reverse bias. |
申请公布号 |
WO2008016420(A2) |
申请公布日期 |
2008.02.07 |
申请号 |
WO2007US13770 |
申请日期 |
2007.06.12 |
申请人 |
SANDISK 3D LLC;SCHEUERLEIN, ROY, E.;KUMAR, TANMAY |
发明人 |
SCHEUERLEIN, ROY, E.;KUMAR, TANMAY |
分类号 |
G11C17/14;G11C11/56;G11C13/00 |
主分类号 |
G11C17/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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