NONVOLATILE SEMICONDUCTOR MEMORY DEVICES AND PROGRAM METHOD THEREOF

摘要

A nonvolatile semiconductor memory devices and program method thereof is provided to increase the performance of a computing system by improving the degree of integration of the flash memory. A memory cell array(210) includes memory cells arranged to the structure for matrix of the bit lines and word lines. A control circuit(220) controls the overall operation of the non-volatile memory device(200). A row selector(240) selectively supplies power to the selective word line and non-selective word line. A column selector(230) selects a specific bit line, and a sense amplifier / write driver(250) stores data in the memory cell array. The sense amplifier / write driver reads data from the memory cell array, and the data buffer(260) stores the read data. A pass / fail check circuit(270) checks out the program path(Pass) or the fail value of data stored in data buffer.