| 摘要 |
The semiconductor storage device according to the present invention comprises a switch provided to a bit line between a memory cells and a sense amplifier and capable of continuously varying a degree of conduction; and a switch control circuit for varying the degree of conduction of the switch in accordance with an access request signal. The semiconductor storage device of the present invention enables operation in which the degree of conduction between the sense amplifier and a memory cell is increased, and an ON state is achieved during a time in which the sense amplifier amplifies the holding voltage of the memory cell and feeds the amplified holding voltage to the bit line. The access time can thereby be reduced.
|
