| 主权项 |
1. A plasma processing apparatus, comprising:
a processing chamber having a dielectric window; a substrate holding unit for holding thereon a processing target substrate within the processing chamber; a processing gas supply unit configured to supply a processing gas into the processing chamber in order to perform a plasma process on the substrate; a RF antenna provided outside the dielectric window in order to generate plasma of the processing gas within the processing chamber by inductive coupling; and a high frequency power supply unit configured to supply a high frequency power having a frequency for generating a high frequency electric discharge of the processing gas, wherein the RF antenna includes an inner coil and an outer coil arranged concentrically and respectively provided at an inner side and an outer side thereof in a radial direction with a gap there-between, the inner coil includes a single inner coil segment or more than one inner coil segments extended along one round, separated in a circumferential direction and connected in series, the outer coil includes a plurality of outer coil segments extended along one round and separated in a circumferential direction and electrically connected with each other in parallel, self-inductances of the inner and outer coil segments are all substantially same, the inner coil and outer coil are configured such that an entire diameter of the RF antenna is adjusted so that a diameter ratio between the inner coil and the outer coil is maintained constant for adjusting a plasma density distribution on the processing target substrate, and the inner coil, the outer coil including the segments are located on a same plane, and lengths of the inner and outer coil segments are substantially same. |
