| 发明名称 | Method for treating a semiconductor | ||
| 摘要 | Methods for treating a semiconductor material, and for making devices containing a semiconducting material, are presented. One embodiment is a method for treating a semiconductor material that includes a chalcogenide. The method comprises contacting at least a portion of the semiconductor material with a chemical agent. The chemical agent comprises a solvent, and an iodophor dissolved in the solvent. | ||
| 申请公布号 | US9373744(B2) | 申请公布日期 | 2016.06.21 |
| 申请号 | US201414253735 | 申请日期 | 2014.04.15 |
| 申请人 | First Solar, Inc. | 发明人 | Foust Donald Franklin |
| 分类号 | H01L31/0445;H01L31/18;H01L31/0224;H01L31/0475;H01L31/0296;H01L31/073 | 主分类号 | H01L31/0445 |
| 代理机构 | MacMillan, Sobanski & Todd, LLC | 代理人 | MacMillan, Sobanski & Todd, LLC |
| 主权项 | 1. A method for treating a semiconductor material, comprising: reacting a semiconductor material with an iodine containing chemical agent, wherein the iodine containing chemical agent comprises a complex between a solvent and elemental iodine. | ||
| 地址 | Tempe AZ US | ||