Lateral diffused metal-oxide-semiconductor device

摘要

A LDMOS includes a gate structure disposed on the surface of a semiconductor substrate, a source region having a first conductivity type, a drain region having the first conductivity type, an isolation region surrounding the source/drain regions, a doped region having a second conductivity type, and a base region having the second conductivity type formed in the doped region. The source/drain regions are respectively disposed on two sides of the gate structure. The doped region surrounds the isolation region, and the bottom of the doped region is deeper than the bottom of the isolation region. The base region is disposed at the surface of the semiconductor substrate.

主权项

1. An LDMOS transistor fabricated on a semiconductor substrate, the transistor comprising:
a gate structure disposed on the surface of the semiconductor substrate; a source region having a first conductivity type disposed at the surface of the semiconductor substrate on a side of the gate structure; a drain region having the first conductivity type disposed at the surface of the semiconductor substrate on another side of the gate structure; an isolation region surrounding the source region and the drain region, wherein the isolation region is a ring-shaped isolation region; a doped region having a second conductivity type surrounding the isolation region, wherein the bottom of the doped region is deeper than the bottom of the isolation region; and a base region having the second conductivity type formed in the doped region at the surface of the semiconductor substrate.