Variable resistance memory device

摘要

A resistance variable memory includes a plurality of first wires, a plurality of second wires, a controller, a memory cell array, a second current rectifying element and a second variable resistance element, an access controller, a first contact plug, and a second contact plug. The access controller switches the second variable resistance element to a low resistance state or a high resistance state in accordance with a voltage applied to the memory cell connected in series. The first contact plug is connected to the even-numbered first wire in the second direction from the substrate via the corresponding access controller. The second contact plug is connected to the odd-numbered first wire in the second direction from the substrate via the corresponding access controller.

主权项

1. A resistance variable memory, comprising:
a plurality of first wires arranged at intervals in a first direction on a substrate and arranged at intervals in a second direction; a plurality of second wires arranged at intervals in a third direction crossing in the first and second directions and arranged in the second direction alternately with the first wires; a memory cell which is arranged at each crossing point with the first wires and third wires, and includes a first variable resistance element; access controllers which include a second variable resistance element connected in series to the memory cell via the first wire and change a resistance of the second variable resistance element in accordance with a voltage applied to the memory cell connected in series; and a first contact plug and a second contact plug which alternatively drive the plurality of first wires aligned in the second direction via the corresponding access controller.