Semiconductor device and method of manufacturing the same

摘要

A method of manufacturing a semiconductor device includes forming stepped stack structures each including conductive patterns stacked in a shape of steps while exposing respective ends thereof and surrounding channel layers, the stepped stack structures being separated from one another by slits, forming first and second contact plugs connected to the ends of the conductive patterns to extend along an extending direction of the channel layers, and simultaneously forming, using a spacer patterning technology (SPT), bit lines connected to one or more of the channel layers and extending along a first direction, first connecting lines extending along a second direction intersecting the first direction, and contact pads extending from the first connecting lines to be connected to the first contact plugs.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
forming stepped stack structures each including conductive patterns stacked in a stepped shape with exposed ends and surrounding channel layers, the stepped stack structures separated from one another by slits; forming first and second contact plugs connected to the ends of the conductive patterns to extend along an extending direction of the channel layers; and simultaneously forming, using a spacer patterning technology (SPT), bit lines connected to one or more of the channel layers and extending along a first direction, first connecting lines extending along a second direction intersecting the first direction, and contact pads extending from the first connecting lines to be connected to the first contact plugs.