发明名称 Film formation method using oscillators for measurement and calibration during calibration step performed during film formation
摘要 A film formation method controls with accuracy the thickness of a thin film formed on a film formation object. The film formation method includes a film formation step of heating a film formation source and forming a film on a film formation object while moving the film formation source and monitoring an amount of released vapors of the film forming material using a quartz oscillator for measurement, a control step of adjusting a heating temperature of the film formation source based on the monitored value of the quartz oscillator for measurement, and a calibration step of calibrating the monitored value of the quartz oscillator for measurement, using a quartz oscillator for calibration and the quartz oscillator for measurement. The calibration step is performed in a middle of the film formation step, after movement of the film formation source is started from a waiting position.
申请公布号 US9382624(B2) 申请公布日期 2016.07.05
申请号 US201514635558 申请日期 2015.03.02
申请人 Canon Kabushiki Kaisha 发明人 Nakagawa Yoshiyuki;Nakano Shingo;Fukuda Naoto
分类号 C23C14/24;C23C16/52;C23C14/54;C23C16/46 主分类号 C23C14/24
代理机构 Fitzpatrick, Cella, Harper & Scinto 代理人 Fitzpatrick, Cella, Harper & Scinto
主权项 1. A film formation method comprising: a film formation step of moving, during deposition of a film, a film thickness sensor for monitoring and a film thickness sensor for calibration while maintaining a relative position of the film thickness sensor for monitoring and the film thickness sensor for calibration with respect to a position of an evaporation source to thereby form the film; and a calibration step of calibrating a thickness of the film obtained by use of the film thickness sensor for monitoring by using a calibration value calculated based on a thickness of the film obtained by use of the film thickness sensor for calibration, wherein the calibration step is performed concurrently with the film formation step after movement of the evaporation source is started from a waiting position.
地址 Tokyo JP