ARRANGEMENT FOR REDUCING CONTAMINATION IN A MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS

摘要

The invention relates to an arrangement for reducing contamination in a microlithographic projection exposure apparatus, wherein the projection exposure apparatus is designed for operation in the EUV and comprises an illumination device, wherein during the operation of the projection exposure apparatus EUV light generated by a plasma excitation of a target material brought about by a first laser light source enters the illumination device via an intermediate focus (IF). The arrangement comprises a second laser light source (140), which directs directional electromagnetic radiation into a region adjoining the intermediate focus (IF) within the illumination device, wherein said second laser light source (140) is designed in such a way that the directional electromagnetic radiation of the second laser light source (140) brings about an evaporation or plasma excitation for at least part of target material that has entered said region during the operation of the projection exposure apparatus.