Conductive bridge memory system and method of manufacture thereof

摘要

A conductive bridge memory system and method of manufacture thereof including: providing a dielectric layer having a hole on a bottom electrode, the hole over the bottom electrode; forming an ionic source layer in the hole and over the bottom electrode including: depositing a reactivation layer over the bottom electrode, depositing a first ion source layer on the reactivation layer, depositing another of the reactivation layer on the first ion source layer, depositing a second ion source layer on the another of the reactivation layer; and forming an upper electrode on the ionic source layer.

主权项

1. A memory system, comprising:
a dielectric layer having a hole; a bottom electrode, wherein the bottom electrode is formed at least one of in and on the dielectric layer, and wherein the hole of the dielectric layer is over the bottom electrode; an ionic source layer in the hole and over the bottom electrode, the ionic source layer including:
a reactivation layer over the bottom electrode,a first ion source layer on the reactivation layer,another of the reactivation layer on the first ion source layer,a second ion source layer on the another of the reactivation layer; and an upper electrode on the ionic source layer.