Nanostructure semiconductor light emitting device

摘要

A nanostructure semiconductor light emitting device includes: a base layer formed of a first-conductivity type nitride semiconductor material; and a plurality of light emitting nanostructures disposed on the base layer to be spaced apart from each other, wherein each of the plurality of light emitting nanostructures includes: a nanocore formed of a first conductivity-type nitride semiconductor material, an active layer disposed on a surface of the nanocore and including a quantum well which is divided into first and second regions having different indium (In) composition ratios in a thickness direction thereof; and a second conductivity-type semiconductor layer disposed on the active layer, and an In composition ratio in the first region is higher than an In composition ratio in the second region.

主权项

1. A semiconductor light emitting device comprising:
a substructure including at least two light emitting regions, each including a plurality of three-dimensional (3-D) light emitting nanostructures; wherein sizes of the 3-D light emitting nanostructures in one of the at least two light emitting regions are different from those in the other of the at least two light emitting regions, each of the plurality of the 3-D light emitting nanostructures includes a first conductivity-type semiconductor core, a second conductivity-type semiconductor shell, and an active layer disposed between the first conductivity-type semiconductor core and the second conductivity-type semiconductor shell and having at least one quantum well, the at least one quantum well has an indium (In) composition ratio varying in a radial direction of each of the plurality of light emitting nanostructures, and the at least one quantum well in one of the at least two regions has a different thickness from the at least one quantum wells in the other of the at least two regions.