Solid-state imaging device and method of manufacturing the same

摘要

A solid-state imaging device includes: a semiconductor substrate; a pixel unit formed on the semiconductor substrate; and a peripheral circuit unit formed on the semiconductor substrate, at a periphery of the pixel unit, in which the pixel unit includes: a photoelectric conversion film which converts incident light into charges; and a floating diffusion which holds the charges, the peripheral circuit unit includes a transistor including a gate electrode and two source and drain diffusion regions, and the two source and drain diffusion regions have a higher impurity concentration than an impurity concentration of the floating diffusion.

主权项

1. A solid-state imaging device comprising:
a semiconductor substrate; a pixel; and a peripheral circuit at a periphery of the pixel, wherein the pixel includes:
a photoelectric conversion film which converts incident light into charges; anda floating diffusion, in the semiconductor substrate, for holding the charges,a non-metal contact plug connected with the floating diffusion,a line connected with the non-metal contact plug, the floating diffusion and the photoelectric conversion film being connected to each other via the non-metal contact plug and the line, the peripheral circuit includes
a transistor including a gate electrode and source and drain diffusion regions, the source and drain diffusion regions located in the semiconductor substrate, andthe source and drain diffusion regions each have a higher impurity concentration than an impurity concentration of the floating diffusion.