Thin film transistors with oxide semiconductor having low resistance patterns with oxygen deficiencies

摘要

A thin film transistor includes a gate electrode on a substrate, a gate insulation layer which covers the gate electrode on the substrate, an oxide semiconductor pattern which is disposed on the gate insulation layer and includes a channel portion superimposed over the gate electrode, and low resistance patterns provided at edges of the channel portion, respectively, and including oxygen vacancies, a channel passivation layer on the oxide semiconductor pattern, a reaction layer which covers the oxide semiconductor pattern and the channel passivation layer, and includes a metal oxide, and a source electrode and a drain electrode which contact the oxide semiconductor pattern.

主权项

1. A thin film transistor, comprising:
a gate electrode on a substrate; a gate insulation layer which covers the gate electrode on the substrate; an oxide semiconductor pattern which is disposed on the gate insulation layer and includes:
a channel portion superimposed over the gate electrode; andlow resistance patterns provided at edges of the channel portion, respectively, and including oxygen vacancies; a channel passivation layer on the oxide semiconductor pattern; a reaction layer which covers the oxide semiconductor pattern and the channel passivation layer, and contacts the low resistance patterns, the reaction layer including a metal oxide and inducing the oxygen vacancies of the low resistance patterns; and a source electrode and a drain electrode which contact the low resistance patterns, the source electrode and the drain electrode being formed on the reaction layer and extending through the reaction layer, wherein the source electrode and the drain electrode are nonoverlapping with the gate electrode.