发明名称 |
METHOD FOR PRODUCING OXIDE PROTECTIVE FILM, OXIDE PROTECTIVE FILM, METHOD FOR MANUFACTURING THIN FILM TRANSISTOR, THIN FILM TRANSISTOR AND ELECTRONIC DEVICE |
摘要 |
A method for producing an oxide protective film, which comprises: a step for forming an oxide protective film precursor film by applying an oxide protective film precursor solution that contains a solvent and a metal component comprising 50 atom% or more of indium over an oxide semiconductor film that is formed on a substrate and contains indium; and a step for converting the oxide protective film precursor film into an oxide protective film that has a higher resistivity than the oxide semiconductor film; and applications of this method for producing an oxide protective film. |
申请公布号 |
WO2016121230(A1) |
申请公布日期 |
2016.08.04 |
申请号 |
WO2015JP84179 |
申请日期 |
2015.12.04 |
申请人 |
FUJIFILM CORPORATION |
发明人 |
TAKATA, MASAHIRO;TANAKA, ATSUSHI;MOCHIZUKI, FUMIHIKO;UMEDA, KENICHI |
分类号 |
H01L21/368;G02F1/1368;G09F9/30;H01L21/316;H01L21/336;H01L29/786 |
主分类号 |
H01L21/368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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