发明名称 METHOD FOR PRODUCING OXIDE PROTECTIVE FILM, OXIDE PROTECTIVE FILM, METHOD FOR MANUFACTURING THIN FILM TRANSISTOR, THIN FILM TRANSISTOR AND ELECTRONIC DEVICE
摘要 A method for producing an oxide protective film, which comprises: a step for forming an oxide protective film precursor film by applying an oxide protective film precursor solution that contains a solvent and a metal component comprising 50 atom% or more of indium over an oxide semiconductor film that is formed on a substrate and contains indium; and a step for converting the oxide protective film precursor film into an oxide protective film that has a higher resistivity than the oxide semiconductor film; and applications of this method for producing an oxide protective film.
申请公布号 WO2016121230(A1) 申请公布日期 2016.08.04
申请号 WO2015JP84179 申请日期 2015.12.04
申请人 FUJIFILM CORPORATION 发明人 TAKATA, MASAHIRO;TANAKA, ATSUSHI;MOCHIZUKI, FUMIHIKO;UMEDA, KENICHI
分类号 H01L21/368;G02F1/1368;G09F9/30;H01L21/316;H01L21/336;H01L29/786 主分类号 H01L21/368
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