发明名称 POLISHING STATE MONITORING APPARATUS, POLISHING APPARATUS, AND METHOD OF POLISHING
摘要 <P>PROBLEM TO BE SOLVED: To provide a polishing state monitoring apparatus precisely and inexpensively measuring the state of a film adhering to the surface of an object under polishing. <P>SOLUTION: The polishing state monitoring apparatus is provided with: a light source 30; a light emitting optical fiber 32 for irradiating the surface being polished of a semiconductor wafer W with a light from the light source 30; a light receiving optical fiber 34 for receiving the light reflected from the surface being polished of the wafer W; a spectroscope for dividing the received reflected light into a plurality of wavelengths; a light receiving device for accumulating information of the lights of the plurality of the divided wavelengths in a form of electrical information; a spectral data generating section for generating spectral data of the reflected light by reading the electrical information accumulated in the light receiving device; and a calculating section 48 for calculating predetermined characteristic values of the surface under polishing of the semiconductor wafer by calculation including multiplication that multiplies wavelength components of the spectral data generated by the spectral data generating section by respectively predetermined weighting factors. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2009246388(A) 申请公布日期 2009.10.22
申请号 JP20090172231 申请日期 2009.07.23
申请人 EBARA CORP;SHIMADZU CORP 发明人 KOBAYASHI YOICHI;NAKAI SHUNSUKE;TSUJI HITOSHI;TSUKUDA YASURO;ISHIMOTO MASUYOSHI;SHINYA KAZUYA
分类号 H01L21/304;B24B37/013;B24B49/04;B24B49/12 主分类号 H01L21/304
代理机构 代理人
主权项
地址