发明名称 スイッチング素子、半導体装置、半導体装置の製造方法
摘要 According to the present invention, a switching element includes a substrate, a first gate pad formed on the substrate, a second gate pad formed on the substrate, a first resistor portion formed on the substrate, the first resistor portion connecting the first gate pad and the second gate pad to each other, and a cell region formed on the substrate and connected to the first gate pad. Thus, measurement of the gate resistance value and selection from gate resistances of the switching element can be performed after the completion of the gate-resistor-incorporating-type switching element.
申请公布号 JP6020733(B2) 申请公布日期 2016.11.02
申请号 JP20150535278 申请日期 2013.09.09
申请人 三菱電機株式会社 发明人 長谷川 滋;森下 和博;木谷 剛
分类号 H01L21/822;H01L21/82;H01L27/04 主分类号 H01L21/822
代理机构 代理人
主权项
地址