CAVITY FORMATION IN INTERFACE LAYER IN SEMICONDUCTOR DEVICES

摘要

Fabrication of radio-frequency (RF) devices involves providing a field-effect transistor (FET), forming one or more electrical connections to the FET, forming one or more dielectric layers over at least a portion of the electrical connections, and disposing an electrical element at least partially above the one or more dielectric layers, the electrical element being in electrical communication with the FET via the one or more electrical connections. RF device fabrication further involves applying an interface material over at least a portion of the one or more dielectric layers, removing at least a portion of the interface material to form a trench above at least a portion of the electrical element, and covering at least a portion of the interface material and the trench with a substrate layer to form a cavity, the electrical element being disposed at least partially within the cavity.

主权项

1. A method for fabricating a radio-frequency (RF) device, the method comprising:
providing a field-effect transistor (FET); forming one or more electrical connections to the FET; forming one or more dielectric layers over at least a portion of the electrical connections; disposing an electrical element at least partially above the one or more dielectric layers, the electrical element being in electrical communication with the FET via the one or more electrical connections; applying an interface material over at least a portion of the one or more dielectric layers; removing at least a portion of the interface material to form a trench above at least a portion of the electrical element; and covering at least a portion of the interface material and the trench with a substrate layer to form a cavity, the electrical element being disposed at least partially within the cavity.