| 摘要 |
A semiconductor memory device has a voltage converter for converting a voltage level of an internal clock signal to obtain a high voltage level clock signal. The high level clock signal accelerates the transmission of the clock signal to latch circuits which control the output transistors of the memory device. Another voltage converter is disposed between the data amplifier and the latch circuit instead of the output of the latch circuit, for prevention of current flowing through both the output transistors.
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