| 摘要 |
PURPOSE: A program voltage generating circuit for semiconductor memory device is provided to output constant program voltage though external power is changed. CONSTITUTION: The circuit comprises a high voltage generation circuit for generating a program voltage to program a plurality of memory cells in response to a first and second detection signals, an internal power voltage generation circuit for receiving an external power voltage and outputting an internal power voltage having constant voltage level, a reference voltage generation circuit for receiving the internal power voltage and outputting a reference voltage having predetermined voltage level, an oscillation circuit for generating an oscillation signal having predetermined frequency, and detector for receiving the internal power voltage, detecting the voltage level of the program voltage and controlling the high voltage generation circuit in response to an activation signal.
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