发明名称 |
Tapered electrode for stacked capacitors |
摘要 |
A method for forming a stacked capacitor includes the steps of providing a first insulating layer having a conductive access path therethrough, forming a second insulating layer on the first insulating layer, forming a trench in the second insulating layer, the trench having tapered sidewalls, forming a first electrode in the trench and on the trench sidewalls, the first electrode being electrically coupled to the conductive access path, forming a dielectric layer on the first electrode and forming a second electrode on the dielectric layer. A stacked capacitor having increased surface area includes a first electrode formed in a trench provided in a dielectric material. The first electrode has tapered surfaces forming a conically shaped portion of the first electrode, the first electrode for accessing a capacitively coupled storage node.
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申请公布号 |
US6165864(A) |
申请公布日期 |
2000.12.26 |
申请号 |
US19980123298 |
申请日期 |
1998.07.28 |
申请人 |
SIEMENS AKTIENGESELLSCHAFT;IBM |
发明人 |
SHEN, HUA;NUETZEL, JOACHIM;RADENS, CARL J.;KOTECKI, DAVID |
分类号 |
H01G4/12;H01L21/02;H01L21/8242;H01L27/10;H01L27/108;(IPC1-7):H01L21/20 |
主分类号 |
H01G4/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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