发明名称 |
Thin film transistor having high mobility and high on-current and method for manufacturing the same |
摘要 |
In a thin film transistor (TFT) including an insulating substrate and a polycrystalline silicon island formed on the insulating layer, a grain size of the polycrystalline silicon island is elongated along one direction. A source region, a channel region and a drain region are arranged in the polycrystalline silicon island in parallel with the direction.
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申请公布号 |
US2004185641(A1) |
申请公布日期 |
2004.09.23 |
申请号 |
US20040815393 |
申请日期 |
2004.04.01 |
申请人 |
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发明人 |
TANABE HIROSHI;HAGA HIROSHI |
分类号 |
H01L21/336;H01L29/49;H01L29/786;(IPC1-7):H01L21/36 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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