发明名称 |
MULTILAYERED PHASE CHANGE MEMORY |
摘要 |
<p>A phase change layer may switch between more and less conductive states in response to electrical stimulation. The phase change layer may be positioned over a non-switching ovonic material which acts as an electrode, a resistive heater, and an insulating barrier. The phase change layer may be positioned over a non-switching ovonic material which acts as an electrode, a resistive heater, and a thermal barrier.</p> |
申请公布号 |
WO2005017906(A1) |
申请公布日期 |
2005.02.24 |
申请号 |
WO2004US23868 |
申请日期 |
2004.07.26 |
申请人 |
INTEL CORPORATION |
发明人 |
JOHNSON, BRIAN, G.;HUDGENS, STEPHEN, J. |
分类号 |
G11C16/02;H01L45/00;(IPC1-7):G11C11/34;H01L27/24 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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