发明名称 MULTILAYERED PHASE CHANGE MEMORY
摘要 <p>A phase change layer may switch between more and less conductive states in response to electrical stimulation. The phase change layer may be positioned over a non-switching ovonic material which acts as an electrode, a resistive heater, and an insulating barrier. The phase change layer may be positioned over a non-switching ovonic material which acts as an electrode, a resistive heater, and a thermal barrier.</p>
申请公布号 WO2005017906(A1) 申请公布日期 2005.02.24
申请号 WO2004US23868 申请日期 2004.07.26
申请人 INTEL CORPORATION 发明人 JOHNSON, BRIAN, G.;HUDGENS, STEPHEN, J.
分类号 G11C16/02;H01L45/00;(IPC1-7):G11C11/34;H01L27/24 主分类号 G11C16/02
代理机构 代理人
主权项
地址