METHOD OF PRODUCING AN EPITAXIAL LAYER ON A SEMICONDUCTOR SUBSTRATE AND DEVICE PRODUCED WITH SUCH A METHOD
摘要
The invention relates to the manufacture of an epitaxial layer, with the following steps: providing a semiconductor substrate; providing a Si-Ge layer on the semiconductor substrate, having a first depth; - providing the semiconductor substrate with a doped layer with an n-type dopant material and having a second depth substantially greater than said first depth; performing an oxidation step to form a silicon dioxide layer such that Ge atoms and n-type atoms are pushed into the semiconductor substrate by the silicon dioxide layer at the silicon dioxide / silicon interface, wherein the n-type atoms are pushed deeper into the semiconductor substrate than the Ge atoms, resulting in a top layer with a reduced concentration of n-type atoms; removing the silicon dioxide layer; growing an epitaxial layer of silicon on the semiconductor substrate with a reduced outdiffusion or autodoping.
申请公布号
WO2006061731(A1)
申请公布日期
2006.06.15
申请号
WO2005IB53945
申请日期
2005.11.29
申请人
KONINKLIJKE PHILIPS ELECTRONICS N.V.;MEUNIER-BEILLARD, PHILIPPE;HUIZING, HENDRIK, G., A.
发明人
MEUNIER-BEILLARD, PHILIPPE;HUIZING, HENDRIK, G., A.