| 摘要 |
<P>PROBLEM TO BE SOLVED: To enable a constant current to be output from each MOS transistor for current output, without reference to a distance from a power supply pad to the MOS transistor for current output. <P>SOLUTION: In a current driving portion 3, wiring (L2) for setting a substrate potential is provided separately from wiring (L1) of a power supply potential VDD, so that a substrate potential of a P-type MOS transistor in a driving cell can be used in common, without reference to a distance from the power supply pad P1 (power supply potential VDD) to each driving cell. <P>COPYRIGHT: (C)2008,JPO&INPIT |
