Bipolar complementary MOS circuit producing method, involves implanting structures for complementary MOS transistors, where implantation of structures includes increase of dopant concentration by implantation in collector

摘要

The method involves forming structures for complementary MOS transistors, and implanting the structures for the complementary MOS transistors. Multiple structures are formed for a bipolar transistor of one power type and a bipolar transistor of another power type. Multiple control structures are implanted under implantation conditions optimized for the former power type, where the implantation of the structures for the complementary MOS transistors includes the increase of the dopant concentration by implantation in a collector of the bipolar transistor of the latter power type. An independent claim is also included for an integrated bipolar complementary MOS circuit comprising bipolar transistors.