| 发明名称 |
OXIDE SEMICONDUCTOR ELECTRODE AND CELL OF DYE-SENSITIZED SOLAR CELL USING IT |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an oxide semiconductor electrode having high incident light utilization efficiency. <P>SOLUTION: The oxide semiconductor electrode has a substrate, a first electrode layer formed on the substrate and made of a metal oxide; and a porous layer formed on the first electrode layer and containing metal oxide semiconductor fine particles. The substrate contains a light scattering material. <P>COPYRIGHT: (C)2008,JPO&INPIT |
| 申请公布号 |
JP2008091162(A) |
申请公布日期 |
2008.04.17 |
| 申请号 |
JP20060269621 |
申请日期 |
2006.09.29 |
| 申请人 |
DAINIPPON PRINTING CO LTD |
发明人 |
YABUUCHI YASUSUKE;NAKAGAWA HIROKI |
| 分类号 |
H01M14/00;H01L31/04 |
主分类号 |
H01M14/00 |
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