| 摘要 |
PROBLEM TO BE SOLVED: To provide a SiC vertical type MOSFET equipped with a channel area and an electronic current carrying way which is led back to an n-type by means of ion implantation in a low concentration p-type deposition film, which does not generate an area where the width of channel area gets narrow owing to poor aligning accuracy of an implantation mask, resulting in reduced withstand pressure, and can achieve high breakdown voltage and low on-resistance at the same time. SOLUTION: The problem can be solved by providing a second leading back layers (41, 42) at positions of equal distance to the left and right from a leading back layer (40) which is served as an electronic current carrying way and forming these electronic current carrying ways by simultaneous ion implantation using the same mask, so that all the intervals between each channel area within the element is made even. COPYRIGHT: (C)2008,JPO&INPIT
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