| 摘要 |
In a quantum cascade laser device 1 , a laminate structure 11 is formed into a stripe shape along a predetermined direction on a principal surface at one side of a substrate 10 , and insulating layers 15 are formed on bilateral sides of the laminate structure 11 , and an insulating layer 16 and a metal layer 17 are formed in sequence on the laminate structure 11 and the insulating layers 15 . The laminate structure 11 is formed such that a cladding layer 12 , an active layer 13 , and a cladding layer 14 are formed in sequence from the side of the substrate 10 . In the active layer 13 , light emitting layers and injection layers are alternately laminated, and the active layer 13 generates light due to intersubband electron transition in a quantum well structure. A shape in a cross section of the laminate structure 11 perpendicular to the direction in which the laminate structure 11 is provided to extend is formed into a rectangle or an inverted mesa shape. In accordance therewith, it is possible to realize a quantum cascade laser device having high slope efficiency, and being capable of stably realizing a single transverse mode operation.
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