| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device having large current capacity, and to provide a manufacturing method thereof. <P>SOLUTION: The semiconductor device has an epitaxial wafer 110, an insulating film, a first electrode, a conductive layer, and a second electrode 160. The epitaxial wafer 110 includes a high defect region 111 and a low defect region 112 having lower defect density than the high defect region 111, and has a main surface 113 and a backside 114 on the opposite side from the main surface 113. The insulating film is formed covering the high defect region 111 on the main surface 113 of the epitaxial wafer 110. The first electrode is formed over the low defect region and adjacent thereto with the insulating film interposed. The conductive layer electrically connects the first electrode adjacent thereto with the insulating film interposed. The second electrode 160 is formed on the backside 114 of the epitaxial wafer 110. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
