Solid-State Image Pickup Device and Method of Manufacturing Same

摘要

Disclosed herein is a solid-state image pickup device including: a photoelectric conversion section configured to convert incident light into a signal charge; a transfer transistor configured to read the signal charge from the photoelectric conversion section and transfer the signal charge; and an amplifying transistor configured to amplify the signal charge read by the transfer transistor, wherein a compressive stress film having a compressive stress is formed on the amplifying transistor.

主权项

1. An imaging device comprising:
a photoelectric conversion section; a transfer transistor coupled to the photoelectric conversion section; a floating diffusion coupled to the transfer transistor; an amplification transistor coupled to the floating diffusion and having a gate region; and a wiring coupled to the gate region, wherein the gate region includes a gate terminal and a silicide layer, the silicide layer is disposed at an upper side of the gate terminal, a first film is disposed at the side of the gate terminal in a cross-section view, a second film is disposed over the gate terminal and first film, the first film is selected from an oxide film and a nitride film, and the second film is selected from an oxide film, a nitride film and an oxynitride film.