| 发明名称 |
LANIO3 THIN-FILM-FORMING COMPOSITION, AND METHOD FOR FORMING LANIO3 THIN-FILM IN WHICH SAID COMPOSITION IS USED |
| 摘要 |
An LaNiO3 thin-film-forming composition contains an LaNiO3 precursor, an organic solvent and a stabilizer. Also, the mixture ratio of the LaNiO3 precursor relative to a total of 100% by mass of the LaNiO3 precursor, the organic solvent and the stabilizer is 1-20% by mass on an oxide basis. Further, the dispersion component (dD), the polarization component (dP), and the hydrogen bond component (dH) of the HSP value of the organic solvent fulfill the relations 14<dD<20, 3<dP<26, and d3<dH<30, respectively. |
| 申请公布号 |
US2016254268(A1) |
申请公布日期 |
2016.09.01 |
| 申请号 |
US201415029781 |
申请日期 |
2014.10.06 |
| 申请人 |
MITSUBISHI MATERIALS CORPORATION |
发明人 |
Fujii Jun;Sakurai Hideaki;Soyama Nobuyuki |
| 分类号 |
H01L27/115;C09D5/24;H01L41/29;H01L49/02;H01L41/047 |
主分类号 |
H01L27/115 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. An LaNiO3 thin-film-forming composition, comprising an LaNiO3 precursor, an organic solvent and a stabilizer, wherein
the mixture ratio of the LaNiO3 precursor relative to a total of 100% by mass of the LaNiO3 precursor, the organic solvent, and the stabilizer is 1 to 20% by mass on an oxide basis, and the dispersion component dD, the polarization component dP, and the hydrogen bond component dH of the HSP value of the organic solvent fulfill the relations 14<dD<20, 3<dP<26, and 3<dH<30, respectively. |
| 地址 |
Chiyoda-ku, Tokyo JP |
