METHOD FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL

摘要

A protective film (3) is formed on a first main surface (1a) of a seed substrate (1). A starting material gas (8) is generated by sublimating a starting material (2) in a state where the protective film (3) is formed on the first main surface (1a), and a silicon carbide single crystal (10) is grown by recrystallizing the starting material gas (8) on a second main surface (1b). During the step for growing the silicon carbide single crystal (10), the temperature of the seed substrate (1) is maintained lower than the temperature of the starting material (2). The thickness of the protective film (3) is 0.3 μm or more. The value obtained by dividing the surface area of a unit area region (A1) of the first main surface (1a) when the first main surface (1a) is viewed from the thickness direction of the seed substrate (1) by the surface area of a unit area region (B1) of the second main surface (1b) when the second main surface (1b) is viewed from the thickness direction is from 1.02 to 1.08 (inclusive).