SEMICONDUCTOR DEVICE

摘要

A semiconductor device includes a first pattern on a first active region, a second pattern on a second active region, and a third pattern on a third active region. The first pattern is spaced from the second pattern by a first interval corresponding to the width of a first recess between the first and second active regions. The second pattern is spaced from the third pattern by a second interval corresponding to the width of a second recess between the second and third active regions. The first, second, and third patterns includes gate patterns, and the first and second recesses include semiconductor material with a conductivity type different from the active regions. The semiconductor material in one recess extends higher than the semiconductor material in the other recess. The first, second, and third patterns have the same width, and the first and second recesses have different depths.

主权项

1. A semiconductor device, comprising:
an isolation region to define an active region in a semiconductor substrate, the active region including a plurality of protruding portions and a plurality of recessed areas; a plurality of patterns overlapping the plurality of protruding portions of the active region and having substantially a same width; and a plurality of semiconductor structures in the plurality of recessed areas, wherein the plurality of recessed areas include first recessed areas in an odd-numbered sequence and second recessed areas in an even-numbered sequence, and wherein the first recessed areas and the second recessed areas are adjacent to each other and have different depths.