发明名称 |
NOVEL INTEGRATION PROCESS TO FORM MICROELECTRONIC OR MICROMECHANICAL STRUCTURES |
摘要 |
The invention relates to transferring, in one exposure, a single-mask feature to form two features on an underlying material. Specifically, a doubled walled structure (i.e. a center opening flanked by adjacent openings) is formed. Advantageously, the openings may be sub-resolution openings. The center opening may be a line flanked by two other lines. The center opening may be circular and surrounded by an outer ring, thus forming a double wall ring structure. In an electronic fuse embodiment, the double wall ring structure is a via filled with a conductor that contacts a lower and upper level metal. In deep trench embodiment, the double wall ring structure is a deep trench in a semiconductor substrate filled with insulating material. In such a way the surface area of the trench is increased thereby increasing capacitance. |
申请公布号 |
US2016322458(A1) |
申请公布日期 |
2016.11.03 |
申请号 |
US201615088592 |
申请日期 |
2016.04.01 |
申请人 |
GLOBALFOUNDRIES Inc. |
发明人 |
Choi Samuel S.;Li Wai-Kin |
分类号 |
H01L29/06;H01L23/525;H01L21/311;H01L21/768;H01L21/033;H01L21/308 |
主分类号 |
H01L29/06 |
代理机构 |
|
代理人 |
|
主权项 |
1. A double wall structure comprising:
a circular center opening in a material; and a lateral opening in the material around the center opening; wherein the lateral opening has an outer wall and the lateral opening is separated from the center opening by an inner wall. |
地址 |
Grand Cayman KY US |