发明名称 SEMICONDUCTOR DEVICE
摘要 A local interconnect is formed in contact with an upper surface of an impurity diffusion region and extends to below a potential supply interconnect. A contact hole electrically couples the local interconnect to the potential supply interconnect. The local interconnect, which is formed in contact with the upper surface of the impurity diffusion region, is used for electrically coupling the impurity diffusion region to the potential supply interconnect.
申请公布号 US2016322383(A1) 申请公布日期 2016.11.03
申请号 US201615204723 申请日期 2016.07.07
申请人 Socionext Inc. 发明人 TAMARU Masaki
分类号 H01L27/118;H01L27/02;H01L29/10;H01L21/768 主分类号 H01L27/118
代理机构 代理人
主权项 1. A semiconductor device comprising: a first impurity diffusion region formed on a substrate; a potential supply interconnect formed in an interconnect layer above the first impurity diffusion region, and extending in a first direction; a first local interconnect formed in contact with an upper surface of the first impurity diffusion region, and extending to below the potential supply interconnect; and a first contact hole electrically coupling the first local interconnect to the potential supply interconnect.
地址 Kanagawa JP