发明名称 |
FLOATING GATE MEMORY CELLS IN VERTICAL MEMORY |
摘要 |
Floating gate memory cells in vertical memory. A control gate is formed between a first tier of dielectric material and a second tier of dielectric material. A floating gate is formed between the first tier of dielectric material and the second tier of dielectric material, wherein the floating gate includes a protrusion extending towards the control gate. A charge blocking structure is formed between the floating gate and the control gate, wherein at least a portion of the charge blocking structure wraps around the protrusion. |
申请公布号 |
EP2973710(A4) |
申请公布日期 |
2016.12.28 |
申请号 |
EP20140770149 |
申请日期 |
2014.03.05 |
申请人 |
Micron Technology, Inc. |
发明人 |
DENNISON, Charles H.;GODA, Akira;HOPKINS, John;SIMSEK-EGE, Fatma Arzum;PARAT, Krishna K. |
分类号 |
H01L27/115;H01L21/28;H01L29/66 |
主分类号 |
H01L27/115 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|