| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for producing silicon carbide powder inexpensively producing silicon carbide powder having an average particle diameter of ≤200 nm and an optional particle diameter on an industrial scale. <P>SOLUTION: The method for producing silicon carbide powder includes heat-treating silicon carbide fine particles or a silicon carbide precursor, wherein the heat treatment is carried out in an atmosphere containing a reducing gas and the heat treatment temperature in the atmosphere is confined to 1,500-1,900°C. <P>COPYRIGHT: (C)2010,JPO&INPIT |
