| 摘要 |
PURPOSE: The method is to accomplish etch process and ashing process simultaneously to the wafer in a same reaction chamber, and to use reaction chamber which can be adjusted in a condition different from each other. CONSTITUTION: The method comprises (a) a step of preparing wafer on which oxidation film is formed and then poly-silicon film is formed on the oxidation film, (b) a step of forming photosensitive film over the poly-silicon film, (c) a step of etching the poly-silicon film through the photosensitive film, (d) a step of ashing the photosensitive film, and (e) a step of stripping residues from the etched poly-silicon film and the photosensitive film wherein the steps (c) and (d) are respectively accomplished under different processing condition in a same reaction chamber. In this method, the processing condition in each process comprises a pressure in the interior of the reaction chamber, flow rate of process gas supplied to the reaction chamber and a RF power supplied to the reaction chamber. According to these processing conditions, the reaction chamber is connected to vacuum pump, gas supplying part and power supply.
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