发明名称 SELF REFRESH METHOD OF A SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE: A self refresh method is provided to reduce power consumption by eliminating a redundant refresh operation. CONSTITUTION: In the self refresh method, a global word line signal(GWL0) of low voltage is applied to a first bank(BANK0). While the global word line signal is applied, respective word line enable signals(WLEN0-WLENn) of high voltage are sequentially applied to refresh respective addresses. In other words, a refresh operation regarding all addresses is carried out by sequentially increasing an address after enabling a bank. Regarding the next bank(BANK1), when the word line enable signal(WLEN0) is applied to the first bank(BANK0), the global word line signal(GWL0) is applied. While the signal(GWL0) is applied, every word line enable signal(WLEN0-WLENn) is sequentially applied. Therefore, a memory cell of a specific address in a second bank can be refreshed.
申请公布号 KR20000009468(A) 申请公布日期 2000.02.15
申请号 KR19980029917 申请日期 1998.07.24
申请人 HYUNDAI MICRO ELECTRONICS CO.,LTD. 发明人 JEONG, UNG SIK
分类号 G11C11/406;(IPC1-7):G11C11/406 主分类号 G11C11/406
代理机构 代理人
主权项
地址
您可能感兴趣的专利